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Samsung 970 EVO Plus 2TB M.2 NVMe SSD

Manufacturer: SAMSUNG
ID: MZ-V7S2T0BW
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Key Specifications

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Specifications
Description
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Technical details
Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Device typeSSD
Weight & dimensions
Weight8 g
Height22.15 mm
Width80.15 mm
Depth2.38 mm
Energy management
Power consumption (standby)0.03 W
Power consumption (sleep)0.005 W
Operating voltage3.3 V
Power consumption (idle)30 mW
Power consumption (average)6 W
Operational conditions
Operating shock1500 G
Packaging data
Bundled softwareMagician Software for SSD management
Package typeBox
Other features
Sequential reading3500 MB/s
Design
Product colourBlack
SSD form factorM.2
Performance
Drive capacity2000 GB
Security algorithms256-bit AES
Mean time between failures (MTBF)1500000 h
Memory typeMLC
Read speed3500 MB/s
Write speed3300 MB/s
Controller typeSamsung Phoenix Controller
S.M.A.R.T. supportcheckmark
TRIM supportcheckmark
Hardware encryptioncheckmark
NAND flash typeMLC (Multi Level Cell)
Active garbage collectionAuto Garbage Collecion Algorithm
DevSlp (device sleep) supportcheckmark
Features
Drive capacity2000 GB
InterfacePCI Express 3.0
Mean time between failures (MTBF)1500000 h
Data transfer rate3 Gbit/s
ECCcheckmark
Read speed3500 MB/s
Write speed3300 MB/s
Hot-Plug supportcross
S.M.A.R.T. supportcheckmark
TRIM supportcheckmark
Random write (4KB)560000 IOPS
Random read (4KB)620000 IOPS
Component forPC
Enhanced Power Loss Data Protection technologycross
Hardware encryptioncheckmark
SSD temperature monitoringcheckmark
PCI Express interface data lanesx4
End-to-End Data Protectioncross
TBW rating1200
SSD form factor2.5"
Market segmentConsumer
NVMecheckmark
NVMe version1.3
DevSlp (device sleep) supportcheckmark
Temperature monitoring and loggingcheckmark
Logistics data
Harmonized System (HS) code84717070
EAN8801643628093
Warranty3 months

The Samsung 970 EVO Plus is an internal Solid State Drive utilizing the M.2 2280 form factor, connecting via the PCIe Gen 3.0 x4 interface. This NVMe 1.3 specification drive is designed for high-speed data delivery in client PC environments, supporting demanding applications such as professional media editing and complex gaming loads. The integrated 3D V-NAND flash technology works in conjunction with the Samsung in-house controller to optimize data processing latency and resource management.

The compact dimensions of the drive facilitate straightforward installation in compatible desktop and laptop systems where physical space is limited. Endurance is rated for extended operational longevity under sustained load conditions, supporting the drive's usage in high-demand multitasking scenarios. Furthermore, hardware-level encryption is supported, including AES 256-bit technology, TCG/Opal, and IEEE1667 protocols, ensuring data integrity and security compliance. Dynamic Thermal Guard technology manages operating temperature fluctuations to maintain performance stability during prolonged activity.

Key Features:
  • 2 TB storage capacity
  • M.2 2280 standard dimensions
  • PCIe Gen 3.0 x4 connection
  • Up to 3500 MB/s sequential read performance
  • Up to 3300 MB/s sequential write performance
  • 1200 TBW endurance rating
  • 1.5 million hours mean time between failures (MTBF)
  • AES 256-bit hardware encryption functionality
  • 3D V-NAND flash technology implemented
  • Supports TRIM and S.M.A.R.T. functionality
  • DEVSLP (Device Sleep) power saving support
Multitronic Vaasa: 0 pcs
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Multitronic Lappeenranta: 0 pcs
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Multitronic Mariehamn: 0 pcs
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The above technical details are for reference only and may change without notice. We reserve the right to correct printing errors and use illustrations for guidance. Some text may be auto-generated or machine-translated, which could lead to inaccuracies.

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