Key Specifications
Choose one or multiple features to search for items that have the same specifications.| Memory | |
| Internal memory | 16 GB |
| Other features | |
| Number of pins | 288 |
| Features | |
| Internal memory type | DDR5 |
| ECC | ![]() |
| Memory clock speed | 5600 MHz |
| Backlight | ![]() |
| Memory voltage | 1.1 V |
| RoHS compliance | ![]() |
| Memory form factor | 288-pin DIMM |
| Memory ranking | 1 |
| Component for | PC |
| Internal memory | 16 GB |
| Product type | Random-access memory |
| Memory layout (modules x size) | 2 x 8 GB |
| Memory data transfer rate | 5600 MT/s |
| Buffered memory type | Unregistered (unbuffered) |
| EAN | 5059902031112 |
The Samsung M323R2GA3DB0-CWM is a 16 GB memory kit consisting of two 8 GB DDR5 modules. It operates at a standard frequency of 5600 MHz, providing the necessary bandwidth for current desktop PCs and workstations. These modules are designed as unbuffered, non-ECC memory, which is typical for consumer-grade systems focused on performance for general computing and multitasking. They adhere to the 288-pin UDIMM form factor for compatibility with a wide range of motherboards.
Engineered to run at an efficient 1.1 V, this memory kit contributes to lower overall system power consumption and thermal output. The memory is intended for use in systems built on Intel or AMD platforms that explicitly support DDR5-5600 speeds. By utilizing the higher data transfer rates of the DDR5 specification, this kit serves as a direct component upgrade to improve system responsiveness and processing capabilities for data-intensive applications without requiring complex configuration.
Key Features:- Provides a total memory capacity of 16 GB
- Configured as a kit of two 8 GB modules
- Operates at a DDR5 frequency of 5600 MHz
- Utilizes a standard 288-pin UDIMM form factor
- Requires a low operating voltage of 1.1 V
- Features an unbuffered and non-ECC architecture
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