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Key Specifications
Choose one or multiple features to search for items that have the same specifications.Weight & dimensions | |
Height | 30 mm |
Width | 133.3 mm |
Operational conditions | |
Storage temperature (T-T) | -55 - 100 °C |
Operating temperature (T-T) | 0 - 85 °C |
Features | |
Internal memory type | DDR3 |
ECC | ![]() |
Memory bus | 64 bit |
Module configuration | 512M x 64 |
Lead plating | Gold |
CAS latency | 9 |
Product colour | Green |
Memory clock speed | 1333 MHz |
Row cycle time | 49.125 ns |
Refresh row cycle time | 260 ns |
Row active time | 36 ns |
Memory voltage | 1.5 V |
SPD profile | ![]() |
Memory form factor | 240-pin DIMM |
Memory ranking | 1 |
Component for | PC/server |
Internal memory | 4 GB |
Memory layout (modules x size) | 1 x 4 GB |
EAN | 740617207620 |
Warranty | 2 years |
Source: Icecat.biz |
This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)
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